? semiconductor components industries, llc, 2012 november, 2012 ? rev. 11 1 publication order number: mbrd835l/d mbrd835lg, mbrd835lt4g, SBRD8835LG, sbrd8835lt4g switchmode power rectifier dpak surface mount package this switchmode power rectifier which uses the schottky barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. features ? low forward voltage ? 150 c operating junction temperature ? epoxy meets ul 94 v ? 0 @ 0.125 in ? compact size ? lead formed for surface mount ? sbrd8 prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* mechanical characteristics ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 75 units per plastic tube ? esd rating: ? machine model = c (> 400 v) ? human body model = 3b (> 8000 v) *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information schottky barrier rectifier 8.0 amperes, 35 volts 4 1 3 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mbrd835lt4g dpak (pb ? free) 2,500 / tape & reel ** dpak case 369c marking diagram b835lg = specific device number y = year ww = work week g = pb ? free device yww b 835lg mbrd835lg dpak (pb ? free) 75 units / rail http://onsemi.com SBRD8835LG dpak (pb ? free) 75 units / rail sbrd8835lt4g dpak (pb ? free) 2,500 / tape & reel ** ** 16 mm tape, 13? reel
mbrd835lg, mbrd835lt4g, SBRD8835LG, sbrd8835lt4g http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v average rectified forward current (at rated v r , t c = 88 c) i f(av) 8.0 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 80 c) i frm 16 a non ? repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 75 a repetitive avalanche current (current decaying linearly to zero in 1 s, frequency limited by t jmax ) i ar 2.0 a storage / operating case temperature t stg ? 65 to +150 c operating junction temperature (note 1) t j ? 65 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance ? junction ? to ? case r jc 2.8 c/w thermal resistance ? junction ? to ? ambient (note 2) r ja 80 c/w 2. rating applies when surface mounted on the minimum pad size recommended. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 8 amps, t c = + 25 c) (i f = 8 amps, t c = +125 c) v f 0.51 0.41 v maximum instantaneous reverse current (note 3) (rated dc voltage, t c = + 25 c) (rated dc voltage, t c = +100 c) i r 1.4 35 ma 3. pulse test: pulse width = 300 s, duty cycle 2%.
mbrd835lg, mbrd835lt4g, SBRD8835LG, sbrd8835lt4g http://onsemi.com 3 typical characteristics 10 1 0.1 0 0.6 v f , instantaneous voltage (volts) figure 1. maximum forward voltage figure 2. typical forward voltage i f , instantaneous forward current (ma) 0.01 0.1 0.2 0.3 0.4 0.5 t j = 125 c 25 c 10 1 0.1 0 0.6 v f , instantaneous voltage (volts) 0.01 0.1 0.2 0.3 0.4 0.5 75 c i f , instantaneous forward current (amps ) 25 c t j = 125 c 10 1 0.1 035 v f , reverse voltage (volts) figure 3. maximum reverse current figure 4. typical reverse current 0.001 5101520 t j = 125 c 25 c 10 1 0.1 0 v r , reverse voltage (volts) 0.01 5101520 t j = 125 c 75 c 25 c i r , reverse current (ma) i r , reverse current (ma) 0.01 100 1000 100 100 c 100 c 25 30 25 30 35
mbrd835lg, mbrd835lt4g, SBRD8835LG, sbrd8835lt4g http://onsemi.com 4 typical characteristics 16 80 130 t c , case temperature ( c) 0 8 7 6 0 130 t a , ambient temperature ( c) 0 t j = 125 c i f(av) , average forward current (amps) 14.4 12.8 11.2 9.6 8 6.4 4.8 3.2 1.6 85 90 95 100 105 110 115 120 125 dc square wave i pk i av 5 (capacitive load) 10 20 i f(av) , average forward current (amps) 5 4 3 2 1 50 10 20 30 40 80 60 70 100 90 110 120 dc (resistive load) square wave 10 20 (resistive load) t j = 125 c i pk i av 5 (capacitive load) r ja = 40 c/w surface mounted on minimum recommended pad size r ja = 6 c/w figure 5. maximum and typical capacitance 1 v r , reverse voltage (volts) 100 10 1000 c, capacitance (pf) typical maximum t j = 25 c figure 6. current derating, infinite heatsink figure 7. current derating 4 3.5 0 t a , ambient temperature ( c) 0 0 i f(av) , average forward current (amps) 1.5 3 4.5 6 4.5 5 i f(av) , average forward current (amps) 3 2.5 2 1.5 1 0.5 130 50 20 30 40 80 60 70 100 90 110 120 t j = 125 c dc (resistive load) square wave 10 20 p f(av) , average forward power dissipation (watt s 8 7 6 0 5 4 3 2 1 7.5 9 10.5 12 13.5 15 t j = 125 c dc (resistive load) square wave 10 20 i pk i av 5 (capacitive load) r ja = 80 c/w surface mounted on minimum recommended pad size i pk i av 5 (capacitive load) 10 figure 8. current derating, free air figure 9. forward power dissipation
mbrd835lg, mbrd835lt4g, SBRD8835LG, sbrd8835lt4g http://onsemi.com 5 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrd835l/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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